The area of the ptype near the junction becomes more. Part ii introduction to physical electronics openstax. Applying a bias to a pn junction forward bias band structure for a forward bias reverse bias band structure for a forward bias. Transport in a pn junction for b 0 massless dirac hamiltonian with a uniform electric field. The energy band diagram of the pnjunction duration. By exploring the electrical properties of silicon, it is possible to acquire an understanding of the inner workings of the pn junction.
Hence comparing the schematic symbol to the pn junction in figure 4, we see the anode is the ptype semiconductor and the cathode is the ntype semiconductor. The circuit schematic symbol of a diode is shown in figure 5. The figure below shows a simplified structure of a pn junction. Open quantumatk and create a new project by clicking on create new. In this pn junction, the entire band gap offset between gan and aln 2. This project neglects band gap narrowing due to heavy doping levels. A study on the band structure of znocds heterojunction. The pn junction is the fundamental building block of the electronic age. Silicon, select a folder for the project, click ok and then open to start the project in the quantumatk main window, click on the icon to open the builder in the builder, go to the stash, click add. E c and e v are known relative to e f nregion pregion a e f c e c e v e f b e c e f e v e v e c d depletion. A few factors determine the probability of electrons in the valence band jumping up to. Valence band p n forming a pn junction electrons continue to diffuse across the junction. P type and n type semiconductors, takenseparately are of very limited use. Conductivity and structure of eras nanoparticles embedded.
Specifically, current will flow readily in one direction forward biased but not in the other reverse biased, creating the basic diode. At t 00, semiconductor materials have basically the same structure as insulators. Ee lecture handouts pdf format download adobe acrobat to read pdf files. Formation of a pn junction diode and its band diagram. A diode is a simple device, which can be implemented by a pnjunction, as well as. The constant of integration is determined by setting e 0 at xx. Which can be understood from the energy band diagram shown above. Physics stack exchange is a question and answer site for active researchers, academics and students of physics. Energy band diagram of a pn junction a before and b after merging the ntype and ptype regions note that this does not automatically align the fermi energies, e f,n and e f, p. The area of the ptype near the junction becomes more negative due to the excess electrons while the ntype.
Forming a pn junction doping one side of a piece of silicon with boron a ptype dopant and the other side with phosphorus an ntype dopant forms a pn junction. Band structure of open circuted pn junction youtube. Smith department of eecs university of california, berkeley eecs 105 spring 2004, lecture 19 prof. Depending on how the junction is biased, current may easily flow between the diode terminals forward bias, v d v on or the current is essentially zero reverse bias, v d files. Figure out the movement of charge carriers in a crystal. The structure is ptype doped from 10 nm to 160 nm and ntype doped from 160 nm to 310 nm. While fermi levels line up in equilibrium in the presence of an external. E f is constant at equilibrium e c and e v are smooth, the exact shape to be determined. Polarizationinduced pn diodes in widebandgap nanowires.
The difference between an insulator and a semiconductor lies in the size of the bandgap. On the nside of m, scl has the exposed positively charged donors, whereas on the pside it has the exposed negatively charged. Pn junction one of the crucial keys to solid state electronics is the nature of the pn junction. While the doping in the nepilayer can be uniform, the doping in the pregion is often either gaussian or errorfunction in nature. This large barrier prevents electrons and holes from overshooting the active region, thus providing builtin electron and hole blocking. However, the structure of these energy levels is the same for all atoms.
Doped semiconductors ntype materials ptype materials diodes and transistors. A pn junction of two different materials in the open circuit case. If we join a piece of p type material to a pieceof n type material such that the crystalstructure remains continuous at the boundary, a pn junction is formed 2. A pn junction consists of two semiconductor regions with opposite doping type as shown in figure 4. The region around m contains the space charge layer scl. In this video, i go over the band diagram of the pn junction, which will allow us to find the electric field and the pn junction width through what is called the builtin potential vbi. The structure can be fabricated by diffusing ptype impurity in the nepilayer grown over an substrate. When ptype and ntype materials are placed in contact with each other, the junction behaves very differently than either type of material alone.
For a pn junction at equilibrium, the fermi levels match on the two sides of the junctions. Exploring the valenceband structure by ups technique a intensityenergy curve, b energyband diagram. The diffusion forms a dipole charge layer at the pn junction interface. Silicon a single silicon atom consists of fourteen negatively. I attach a pdf file of one of my lectures where i explain this stepbystep. The region on the left is ptype with an acceptor density n a, while the region on the right is ntype with a donor density n d. Band structure of open circuted pn junction study buddy. While in thermal equilibrium no external voltage is applied between thentype andptype material, there is an internal potential,f, which is caused by the workfunction difference between thentype andptype. A steadystate balance of carriers is achieved at the junction where diffusive flux of the carriers is balanced by the drift flux. Ee lecture notes university of california, berkeley.
Extraction of the eg of zno using the transmittance measurement results a extraction of cutoff wavelength by the linear extrapolation, b location of the maximum first derivative. Bjt structure and operational modes recall that the semiconductor diode is simply a pn junction. Electrons and holes reach an equilibrium at the junction and form a depletion region. Zero bias no external voltage potential is applied to the pn junction diode.
Valence band conduction band forming a pn junction once in the ptype they can drop down into the valence band and to fill up one of the hole states. Semiconductors, diodes, transistors horst wahl, quarknet presentation, june 2001 electrical conductivity. At the left and right boundaries, metal contacts are connected to the gaas semiconductor i. At t 00, semiconductor materials have basically the same structure as. That implies that you would have to supply energy to get an electron to go up on the diagram, and supply energy to get a hole to go down. The difference between an insulator and a semiconductor lies in the size of the bandgap eg. A pn junction band diagram when the two semiconductors are in contact. Diode schematic symbol and actual picture of a common 1n914 diode the black stripe in the picture is the cathode. Also, note that this flatband diagram is not an equilibrium diagram since both electrons and holes can lower their energy by crossing the junction. Energy band diagram of a pn junction in thermal equilibrium. In this lecture, i discussed about the energy band diagram of the pn junction in equilibrium. Figure 1b shows energy bandedge diagrams for a gaaseras pn junction and a gaasonly pn junction, obtained by numerical solution of poissons equation in one dimension. Energy band diagram of a pn junction a before and b after merging the ntype and ptype regions.
In solidstate physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels fermi level and nearby energy band edges as a function of some spatial dimension, which is often denoted x. Advanced discussion about pn junction, especially focus on the affect of the depletion region in energy band diagram. Energy band diagram at thermal equilibrium at thermal equilibrium energy band diagram of a pn junction in thermal equilibrium while in thermal equilibrium no external voltage is applied between the ntype and ptype material, there is an internal potential, f, which is caused by the workfunction difference between the ntype and ptype pn. The electric field results from the deviation from charge neutrality in the vicinity of the junction. Thermal equilibrium, carrier concentrations lecture. The dopants are assumed to be shallow, so that the electron hole density in the ntype ptype region is approximately equal to the donor acceptor density. The upward direction in the diagram represents increasing electron energy.
Within the band structure model, even under the effect of an external electric field, filled. There is a builtin voltage at the pn junction interface that prevents penetration of electrons into the pside and holes into the nside. Photocurrent in a silicon pn junction quantumatk q2019. Band diagram of pn junction under a equilibrium and b forward bias. A silicon pn junction in thermal equilibrium at t 300 k is doped such that e fe fi 0.
954 1226 837 575 1219 1409 602 939 147 548 1561 553 1281 1094 29 107 890 1074 1555 6 9 564 1080 146 124 518 44 574 845 229 504 1308 1464 167 1108 678 1387 471 764